Ultrasound regeneration of EL2 centres in GaAs-Reference-Cited by-同舟云学术

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Ultrasound regeneration of EL2 centres in GaAs

Published:1994-02-01 Issue:2 Volume:9 Page:158-162
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Buyanova I A,Ostapenko S S,Sheinkman M K,Murrikov M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=2/a=005/pdf

Reference16 articles.

1. Photoelectric memory effect in GaAs

2. Auger de-excitation of a metastable state in GaAs

3. Photoquenching and photoinduced-recovery properties of theEL2defect in GaAs: Evidence against the identification ofEL2with the isolatedAsGadefect

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures;Journal of Applied Physics;2018-04-28

2. Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure;Journal of Semiconductors;2016-11-24

3. Semiconductor Ultrasound Treatment;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

4. Sonoluminescence and acoustically driven optical phenomena in solids and solid–gas interfaces;Physics Reports;1999-01

5. Defect mobility in GaAs under conditions of NMR saturation by an ac electric field;Physics of the Solid State;1997-02

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