Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application
Author:
Affiliation:
1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
2. School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference17 articles.
1. Suppression of donor-vacancy clusters in germanium by concurrent annealing and irradiation
2. Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
3. Fluorine in Silicon: Diffusion, Trapping, and Precipitation
4. Effect of Fluorine Co-Implant on Boron Diffusion in Germanium Preamorphized Silicon During Post-LSA Rapid Thermal Annealing
5. Lattice site investigation of F in preamorphized Si
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