Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices-Reference-Cited by-同舟云学术

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Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

Published:2021-01-07 Issue:1 Volume:129 Page:013901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yamada A.¹,Yamada M.¹²,Shiihara T.¹,Ikawa M.¹,Yamada S.¹²,Hamaya K.¹²^ORCID

Affiliation:

1. Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan

2. Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0035323

Reference65 articles.

1. Spintronics: Fundamentals and applications

2. Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures

3. Future perspectives for spintronic devices

4. Spin-based logic in semiconductors for reconfigurable large-scale circuits

5. MOS-Based Spin Devices for Reconfigurable Logic

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si;Materials Science in Semiconductor Processing;2024-04

2. Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi;Materials Science in Semiconductor Processing;2024-03

3. Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi;Applied Physics Letters;2021-11-08

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