Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon-Reference-Cited by-同舟云学术

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Published:2015-11-28 Issue:20 Volume:118 Page:205503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bory Benjamin F.¹,Rocha Paulo R. F.²³,Gomes Henrique L.²,de Leeuw Dago M.³^ORCID,Meskers Stefan C. J.¹

Affiliation:

1. Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

2. Instituto de Telecomunicações, Av. Rovisco, Pais, 1, 1049-001 Lisboa, Portugal and Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal

3. Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany

Funder

Dutch ministery of education culture and science, gravity program

European community

Fundacao para Cienccia e Tecnologia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936349

Reference64 articles.

1. J. Hutchby and M. Garner , in Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Workshop & ERD/ERM Working Group Meeting, 6–7 April 2010 (ITRS, 2010), p. 1.

2. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

3. Nonvolatile Memory Elements Based on Organic Materials

4. Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

5. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

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