Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films-Reference-Cited by-同舟云学术

Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

Published:2020-03-01 Issue:3 Volume:8 Page:031104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Bhuiyan A F M Anhar Uddin¹,Feng Zixuan¹,Johnson Jared M.²^ORCID,Huang Hsien-Lien²,Sarker Jith³,Zhu Menglin²,Karim Md Rezaul¹^ORCID,Mazumder Baishakhi³^ORCID,Hwang Jinwoo²,Zhao Hongping¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

3. Department of Materials Design and Innovation, University at Buffalo, Buffalo, New York 14260, USA

Funder

NSF

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5140345

Reference34 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

5. Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

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