Fabrication and characterization of pulse laser deposited Ni2Si Ohmic contacts on n-SiC for high power and high temperature device applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1357777
Reference15 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Fundamentals of SiC-Based Device Processing
3. The Physics of Ohmic Contacts to SiC
4. A critical review of ohmic and rectifying contacts for silicon carbide
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