A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp2-carbon-Reference-Cited by-同舟云学术

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp2-carbon

Published:2020-07-13 Issue:2 Volume:117 Page:023503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Shaoyu¹²^ORCID,Cheng Xinhong¹²,Pan Ruiyan³,Liu Xiaobo¹²,Zheng Li¹^ORCID,Yu Yuehui¹²

Affiliation:

1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA

Funder

CAS project

The national natural science foundation of China

The science and technology commission of Shanghai municipality

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0009813

Reference22 articles.

1. S. K. Gupta , J. Singh , and J. Akhtar , Physics and Technology of Silicon Carbide Devices ( InTech, 2016), Chap. 8, p. 208.

2. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

3. Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

4. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

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1. Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing;Solid State Phenomena;2024-08-22

2. Regression Model for the Specific Contact Resistance of SiC Ohmic Contacts;IEEE Transactions on Semiconductor Manufacturing;2021-11

3. Core and Surface Electronic States and Phonon Modes in SiC Quantum Dots Studied by Optical Spectroscopy and Hybrid TDDFT;The Journal of Physical Chemistry C;2021-03-23