Deep levels as local probes for the study of superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339215
Reference37 articles.
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4. Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
5. Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
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1. Photoionization study of deep centers in GaN∕AlGaN multiple quantum wells;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
2. Wannier-stark effect in Ge/Si quantum dot superlattices;Semiconductors;2008-03
3. DLTS study of the Wannier–Stark effect in Ge/Si QD superlattices;Physica B: Condensed Matter;2007-12
4. Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs;Journal of Crystal Growth;1999-05
5. Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells;Materials Science Forum;1995-11
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