Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95940
Reference11 articles.
1. Optical characterization of interface disorder in multi-quantum well structures
2. Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature
3. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
4. Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice
5. Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
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2. Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy;Journal of Crystal Growth;2005-05
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4. Sharp Exciton Photoluminescence in Low-Temperature-Grown GaAs/AlGaAs Multiple Quantum Wells;Japanese Journal of Applied Physics;2002-06-15
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