Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
2. Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption
3. Interface roughness in quantum wells prepared with growth interruptions
4. Excitons, phonons, and interfaces in GaAs/AlAs quantum-well structures
5. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth Interruption Effects of GaAs/AlGaAs Quantum Wells Grown by Molecular Beam Epitaxy;Journal of the Korean Vacuum Society;2010-09-30
2. Photoluminescence characterization of midinfrared InNxAs1−x/In0.53Ga0.47As∕InP multiquantum wells with various N contents;Applied Physics Letters;2005-08-22
3. Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy;Journal of Crystal Growth;2003-01
4. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells;Physical Review B;2000-04-15
5. Segregation, interface morphology, and the optical properties ofGaAs/AlAsquantum wells: A theoretical study;Physical Review B;1999-07-15
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