Interface roughness in quantum wells prepared with growth interruptions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108542
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1. 6.1 Growth and preparation of quantum wells on GaAs substrates;Growth and Structuring;2013
2. Realistic heterointerface model for excitonic states in growth-interrupted GaAs quantum wells;Physical Review B;2006-08-08
3. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells;Physical Review B;2000-04-15
4. Photoluminescence study of interface microroughness and exciton transfer in growth-interrupted single quantum wells;Journal of Luminescence;1998-11
5. Real space imaging of (0 0 1) heterointerfaces;Journal of Crystal Growth;1997-05
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