Comment on ‘‘Chemical mapping of semiconductor interfaces at near-atomic resolution’’
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.65.2317/fulltext
Reference11 articles.
1. Optical characterization of interface disorder in multi-quantum well structures
2. Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice
3. Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices
4. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
5. Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
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