On the chemical homogeneity of InxGa1−xN alloys – Electron microscopy at the edge of technical limits-Reference-Cited by-同舟云学术

On the chemical homogeneity of InxGa1−xN alloys – Electron microscopy at the edge of technical limits

Published:2017-07 Issue: Volume:65 Page:24-34
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Specht Petra,Kisielowski Christian

Funder

US Department of Energy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference98 articles.

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2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. Growth and applications of Group III-nitrides

5. Impact of low-temperature buffer layers on nitride-based optoelectronics

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