Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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2. D.V. Lang, J. Appl. Phys. 45 (1974) 3014, 3023
3. Consideration of discrete interface traps in InGaAs/GaAs heterojunctions
4. Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
5. Interface trap and interface depletion in lattice-mismatched GaInAs/GaAs heterostructures
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