Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells-Reference-Cited by-同舟云学术

Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells

Published:2014-06-06 Issue:8 Volume:23 Page:1003-1016
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Kechiantz Ara¹²,Afanasev Andrei¹,Lazzari Jean-Louis³

Affiliation:

1. Department of Physics; The George Washington University; 725 21st Street, NW Washington DC 20052 USA

2. On leave of absence: Institute of Radiophysics and Electronics; National Academy of Sciences; 1 Brothers Alikhanyan st. Ashtarak 0203 Armenia

3. Centre Interdisciplinaire de Nanoscience de Marseille, CINaM; UMR 7325 CNRS - Aix-Marseille Université; Campus de Luminy, Case 913, 163 Avenue de Luminy 13288 Marseille cedex 9 France

Funder

CNRS, France

The George Washington University, USA

Dominion Resources, Inc., USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2521/fullpdf

Reference35 articles.

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5. Quantum dot solar cells;Raffaelle;Progress in Photovoltaics: Research and Application,2002

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