Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96619
Reference14 articles.
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4. Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensity
5. Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity
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1. Monte Carlo growth and in situ characterisation for AlxGa1−xAs heteroepitaxy;Computational Materials Science;2005-04
2. Molecular Beam Epitaxy;Handbook of Thin Film Deposition Processes and Techniques;2001
3. Long-lived excitonic ground states in GaAs/AlAs coupled quantum well structures;Semiconductor Science and Technology;1994-11-01
4. Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures;Physical Review Letters;1994-05-23
5. The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy;Journal of Materials Research;1993-12
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