Thermal stability and electrical properties of Zr/Si1−x−yGexCy contacts after rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122141
Reference19 articles.
1. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
2. High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane
3. CoSi2 and TiSi2 for heterodevices
4. Effects of Rapid Thermal Annealing on W/Si1−xGex Contacts
5. CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion
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1. Contact Metallization on Silicon–Ger manium;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13
2. Overview;Silicon Heterostructure Handbook;2005-11
3. Contact Metallization on Silicon–Germanium;Silicon Heterostructure Handbook;2005-11
4. Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing;Solid-State Electronics;2003-04
5. Annealing of thin Zr films on Si 1−x Ge x (0≤ x ≤1): X-ray diffraction and Raman studies;Journal of Physics and Chemistry of Solids;2002-10
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