CoSi2 and TiSi2 for heterodevices-Reference-Cited by-同舟云学术

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CoSi2 and TiSi2 for heterodevices

Published:1995-12 Issue:1-2 Volume:270 Page:549-554
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Glück M.,Schüppen A.,Rösler M.,Heinrich W.,Hersener J.,König U.,Yam O.,Cytermann C.,Eizenberg M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Refractory silicides for integrated circuits

2. A self-aligned CoSi2interconnection and contact technology for VLSI applications

3. Self-aligned silicides or metals for very large scale integrated circuit applications

4. VLSI Electronic Microstructure Science;Nicolet,1983

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1. Thermoelectric silicides: A review;Japanese Journal of Applied Physics;2017-03-03

2. Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap;Journal of Applied Physics;2012-09

3. Modeling germanium diffusion in Si1−xGex/Si superlattice structures;Journal of Applied Physics;2009-02-15

4. Electronic structure of Co (Si, Ge) compounds: Ab-initio calculation;Physica B: Condensed Matter;2008-10

5. Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms;Journal of Materials Science: Materials in Electronics;2007-12-05

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