CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion-Reference-Cited by-同舟云学术

CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion

Published:1995-12-15 Issue:12 Volume:78 Page:7063-7069
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nur O.,Willander M.,Hultman L.,Radamson H. H.,Hansson G. V.,Sardela M. R.,Greene J. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.360411

Reference18 articles.

1. Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors

2. Reduction of the Barrier Height of Silicide/p-Si1-xGexContact for Application in an Infrared Image Sensor

3. Strain characterization of CoSi2/n‐Si0.9Ge0.1/p‐Si heterostructures

4. Thermal reaction between Pt thin films and SixGe1−xalloys

5. Compound formation at the interaction of Pd with strained layers of Si1−xGexepitaxially grown on Si(100)

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