Annealing of thin Zr films on Si 1−x Ge x (0≤ x ≤1): X-ray diffraction and Raman studies

Author:

Chaix-Pluchery O.,Chenevier B.,Aubry-Fortuna V.,Matko I.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference33 articles.

1. Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1−xGex alloys;Wang;J. Appl. Phys.,1997

2. Interfacial reactions of Ti/ and Zr/Si1−xGex/Si contacts with rapid thermal annealing;Yasuda;Thin Solid Films,2000

3. Silicide formation and stability of Ti/SiGe and Co/SiGe;Wang;Thin Solid Films,1995

4. Effects of rapid thermal annealing on W/Si1−xGex contacts;Aubry;Mater. Res. Soc. Symp. Proc.,1994

5. V. Aubry-Fortuna, O. Chaix-Pluchery, F. Fortuna, C. Hernandez, D. Bensahel, Structural properties and stability of Zr– and Ti–Si1−xGex systems during rapid thermal annealing, J. Appl. Phys., in press.

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