Effects of propane and methane on carbonization and surface morphology in heteroepitaxial growth of β‐SiC films on (100) Si via chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109843
Reference11 articles.
1. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
2. Textured diamond growth on (100) β‐SiC via microwave plasma chemical vapor deposition
3. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
4. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si
5. Growth and Characterization of Cubic SiC Single‐Crystal Films on Si
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1. A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition;Diamond and Related Materials;2005-08
2. Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface.;JOURNAL OF CHEMICAL ENGINEERING OF JAPAN;2001
3. Mechanistic Study and Characterization of 3C-SiC(100) Grown on Si(100);Journal of The Electrochemical Society;2001
4. In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane;Journal of Crystal Growth;2000-10
5. Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-05
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