Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface.-Reference-Cited by-同舟云学术

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Growth Chemistry and Interface Characterization of Single Crystal SiC on Modified Si Surface.

Published:2001 Issue:5 Volume:34 Page:692-699
ISSN:0021-9592
Container-title:JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
language:en
Short-container-title:J. Chem. Eng. Japan

Author:

NAHM KEE SUK¹,KIM KWANG CHUL²,PARK CHAN IL²,LIM KEE YOUNG²³,YANG YEONG SEOK⁴,SEO YOUNG HUN⁵

Affiliation:

1. School of Chemical Engineering and Technology, Chonbuk National University

2. Department of Semiconductor Science and Technology, Chonbuk National University

3. School of Science and Technology, Chonbuk National University

4. Department of Chemical Engineering, Woosuk University

5. Anam Semiconductor Co. Ltd.

Publisher

Society of Chemical Engineers, Japan

Subject

General Chemical Engineering,General Chemistry

Link

http://www.jstage.jst.go.jp/article/jcej/34/5/34_5_692/_pdf

Reference34 articles.

1. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si

2. The growth of hetero-epitaxial SiC films by pyrolysis of various alkyl-silicon compounds

3. Effects of propane and methane on carbonization and surface morphology in heteroepitaxial growth of β‐SiC films on (100) Si via chemical vapor deposition

4. Gas‐phase silicon atoms in silane chemical vapor deposition: Laser‐excited fluorescence measurements and comparisons with model predictions

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1. Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review;Journal of Materials Research;2012-07-31

2. Infrared spectroscopic detection of the methylsilyl (CH3SiH2, X2A′) and the silylmethyl (CH2SiH3, X2A′) radicals and their partially deuterated counterparts in low temperature matrices;Chemical Physics;2005-08

3. Infrared spectroscopic identification of the methylsilylidyne (SiCH3, X2A″) and the silenyl (H2CSiH, X2A′) radicals in methane–silane matrices;Chemical Physics Letters;2005-03

4. Electrical characterization of C-coated nickel silicide nanowires grown on Ni-loaded Si substrate;Korean Journal of Chemical Engineering;2004-12

5. Anomalous growth and characterization of carbon-coated nickel silicide nanowires;Chemical Physics Letters;2004-01

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