In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Progress in epitaxial growth of SiC
2. Growth kinetics of vapor-grown SiC
3. T. Kaneko, H. Sone, N. Miyakawa, M. Naka, Inst. Phys. Conf. Ser. Vol. 142, IOP, Bristol, 1996, p. 53.
4. Growth Kinetics of Silicon Carbide Chemical Vapor Deposition from Methyltrichlorosilane
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