Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126217
Reference8 articles.
1. Reaction and regrowth control of CeO2on Si(111) surface for the silicon‐on‐insulator structure
2. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
3. Growth of Buffer Layers on Si Substrate for High-TcSuperconducting Thin Films
4. Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer
5. Heteroepitaxial growth of Y2O3films on silicon
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