Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam
Author:
Affiliation:
1. Department of Physics, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan 430072, China
2. Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913523
Reference38 articles.
1. Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
2. Effect of pre-existing disorder on surface amorphization in GaN
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4. Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films
5. Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures
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