Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots-Reference-Cited by-同舟云学术

Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots

Published:2020-08-07 Issue:5 Volume:128 Page:055701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Miyauchi Yudai¹^ORCID,Ikari Tetsuo¹^ORCID,Mano Takaaki²^ORCID,Noda Takeshi³^ORCID,Fukuyama Atsuhiko¹^ORCID

Affiliation:

1. Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

2. Quantum Dot Research Center, National Institute for Materials Science, Tsukuba, Ibaraki, Japan

3. Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0011571

Reference25 articles.

1. Gain and the threshold of three-dimensional quantum-box lasers

2. Characteristics of highly stacked InAs quantum-dot laser grown on vicinal (001)InP substrate

3. Electrically Driven Single-Photon Source

4. Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

5. Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots

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