Properties of aluminum epitaxial growth on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328722
Reference10 articles.
1. Molecular beam epitaxy of alternating metal‐semiconductor films
2. Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
3. X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
4. The interaction of silver and aluminium on gallium arsenide (001) surfaces: A study by mbe and associated techniques
5. New results in the study of the aluminium epitaxial growth on gallium arsenide (001)
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