Hydrogen annealing of silicon gate‐nitride‐oxide‐silicon nonvolatile memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93634
Reference5 articles.
1. The Effects of High Temperature Annealing on MNOS Devices
2. Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on Annealing
3. Influence of a high-temperature hydrogen anneal on the memory characteristics of p-channel MNOS transistors
4. High‐temperature H2anneal of interface defects in electron‐beam‐irradiated MNOS structures
5. Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices
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2. Unstable displacement defects and hydrogen trapping in GaAs;Physical Review B;1997-08-15
3. Silicon nitride and oxynitride films;Materials Science and Engineering: R: Reports;1994-07
4. Dynamic behavior of hydrogen in silicon nitride and oxynitride films made by low-pressure chemical vapor deposition;Physical Review B;1993-08-15
5. Effects of oxygen content and oxide layer thickness on interface state densities for metal‐oxynitride‐oxide‐silicon devices;Journal of Applied Physics;1991-08
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