Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiNx:H Thin Film for Si-Based Optoelectronic Devices

Author:

Singh Sarab Preet1,Srivastava Pankaj1

Affiliation:

1. Indian Institute of Technology Delhi

Abstract

There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases. Our studies demonstrate that the least amount of hydrogen in the as-deposited (ASD) a-SiNx:H films not only allows in-situ formation of Si-nanostructures but also stabilizes silicon nitride (Si3N4) phase. The recent advances made in controlling the shape and size of Si-nanostructures embedded in a-SiNx:H matrix by swift heavy ion (SHI) irradiation are briefly discussed.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of thermal and pulse laser annealing on photoluminescence of CVD silicon nitride films;Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series;2019-06-28

2. Blue and red light-emitting non-stoichiometric silicon nitride-based structures;Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series;2018-11-01

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