Effects of oxygen content and oxide layer thickness on interface state densities for metal‐oxynitride‐oxide‐silicon devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349519
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5. Photoionization cross section of electron traps in thin oxynitride films of metal‐oxynitride‐oxide‐silicon devices
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