High‐temperature H2anneal of interface defects in electron‐beam‐irradiated MNOS structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328071
Reference16 articles.
1. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
2. Effects of electron‐beam irradiation on the properties of CVD Si3N4 films in MNOS structures
3. Low pressure rf annealing: A new technique to remove charge centers in MIS dielectrics
4. Effects of RF annealing on the excess charge centers in MIS dielectrics
5. The effect of RF annealing upon electron-beam irradiated MIS structures
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2. Influence of silicon dioxide-silicon interface trap charges on the performance of monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon convolver;IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control;2003-01
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4. Response of interface traps during high-temperature anneals (MOSFETs);IEEE Transactions on Nuclear Science;1991-12
5. A simple method of interface‐state reduction in metal‐nitride‐oxide‐semiconductor structures;Journal of Applied Physics;1991-04-15
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