A simple method of interface‐state reduction in metal‐nitride‐oxide‐semiconductor structures-Reference-Cited by-同舟云学术

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A simple method of interface‐state reduction in metal‐nitride‐oxide‐semiconductor structures

Published:1991-04-15 Issue:8 Volume:69 Page:4448-4450
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sheu Yea‐Dean

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.348376

Reference13 articles.

1. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

2. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure

3. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures

4. High‐temperature H2anneal of interface defects in electron‐beam‐irradiated MNOS structures

5. Experimental results on three-phase polysilicon CCD's with a TCE-SiO/SUB 2//Si/SUB 3/N/SUB 4/ gate insulator

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid Pulsed CO2 — Laser Annealing of Silicon-Nitride / Silicon Interface States;Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices;1993

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