Planar regrowth of InP and InGaAs around reactive ion etched mesas using atmospheric pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110351
Reference10 articles.
1. Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase Epitaxy
2. 1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
3. MOVPE studies for the development of GaInAsP/InP lasers with semi-insulating InP blocking layers
4. High‐speed distributed feedback lasers grown by hydride epitaxy
5. Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl4
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1. MOCVD Regrowth of InP on Hybrid Silicon Substrate;ECS Solid State Letters;2013-08-30
2. Planar-buried-heterostructure laser diodes with oxidized AlAs insulating current blocking;IEEE Journal of Selected Topics in Quantum Electronics;1999
3. Comparison of chlorocarbons as an additive during MOVPE for flat burying growth of InP;Journal of Crystal Growth;1997-04
4. High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique;IEEE Photonics Technology Letters;1995-08
5. Temporally resolved regrowth of InP;Journal of Crystal Growth;1995-07
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