Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107649
Reference12 articles.
1. Orientation dependent growth behaviour during hydride VPE regrowth of InP:Fe around reactive ion etched mesas
2. Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy
3. Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy
4. Planar selective growth of InP by MOVPE
5. MOVPE growth of InP around reactive ion etched mesas
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1. Butt-joint Regrowth method by MOCVD for integration of evanescent wave coupled photodetector and MQW semiconductor optical amplifier;Chinese Physics B;2021-09-16
2. Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers;Journal of Electronic Materials;2011-10-27
3. Suppression of indium droplet formation by adding CCl4during metalorganic chemical vapor deposition growth of InN films;Semiconductor Science and Technology;2009-05-26
4. Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride;Journal of Crystal Growth;2003-02
5. Metalorganic vapor-phase epitaxial regrowth of InP on reactive ion-etched mesa structures for p-substrate buried heterostructure laser application;Journal of Crystal Growth;1997-09
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