MOVPE growth of InP around reactive ion etched mesas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas
2. Planar selective growth of InP by MOVPE
3. Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy
4. Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy
5. MOVPE growth of SiO2-masked InP structures at reduced pressures
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