1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen-Reference-Cited by-同舟云学术

1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen

Published:1991-07-15 Issue:3 Volume:59 Page:253-255
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kjebon O.,Lourdudoss S.,Hammarlund B.,Lindgren S.,Rask M.,Ojala P.,Landgren G.,Broberg B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.105612

Reference10 articles.

1. High‐speed distributed feedback lasers grown by hydride epitaxy

2. High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures onp‐InP substrates

3. Wide‐bandwidth and high‐power InGaAsP distributed feedback lasers

4. 1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

5. High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps

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