Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications-Reference-Cited by-同舟云学术

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

Published:2014-10-27 Issue:17 Volume:105 Page:172902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Y.¹,Shao Y. Y.¹,Lu X. B.¹,Zeng M.¹,Zhang Z.¹,Gao X. S.¹,Zhang X. J.²,Liu J.-M.²,Dai J. Y.³

Affiliation:

1. Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China

2. Laboratory of Solid State Microstructures and Innovation Center for Advanced Microstructure, Nanjing University, Nanjing 210093, China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900745

Reference25 articles.

1. A Novel SONOS Structure For Nonvolatile Memories With Improved Data Retention

2. 0.13 μm MONOS single transistor memory cell with separated source lines

3. On the go with SONOS

4. Design considerations in scaled SONOS nonvolatile memory devices

5. The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

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