X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.127086
Reference11 articles.
1. Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)2Sx treatment
2. Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes
3. Interface properties of (NH4)2Sx‐treated In0.5Ga0.5P Schottky contacts
4. Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
5. Effect of surface treatment by (NH[sub 4])[sub 2]S[sub x] solution on the reduction of ohmic contact resistivity of p-type GaN
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