Interface properties of (NH4)2Sx‐treated In0.5Ga0.5P Schottky contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358801
Reference18 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
3. Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
4. Sulfur as a surface passivation for InP
5. S‐passivated InP (100)‐(1×1) surface prepared by a wet chemical process
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1. Improved performance of a dual-passivated heterojunction bipolar transistor;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
2. Thermal-Stability Improvement of a Sulfur-Passivated InGaP/InGaAs/GaAs HFET;IEEE Transactions on Device and Materials Reliability;2006-03
3. Characteristics of a sulfur-passivated InGaP∕InGaAs∕GaAs heterostructure field-effect transistor;Applied Physics Letters;2005-08-22
4. Electrical properties of sulfur-passivated III–V compound devices;Vacuum;2002-09
5. Surface analysis of (NH[sub 4])[sub 2]S[sub x]-treated InGaN using x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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