Characteristics of a sulfur-passivated InGaP∕InGaAs∕GaAs heterostructure field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2032599
Reference13 articles.
1. On the improvement of gate voltage swings in delta -doped GaAs/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic heterostructures
2. Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
3. Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
4. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors
5. Metal-dependent Fermi-level movement in the metal/sulfur-passivated InGaP contact
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3. Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics;Applied Physics Letters;2008-07-07
4. Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2Film on (NH4)2Sx-treated GaAs;Japanese Journal of Applied Physics;2007-11-30
5. Thermal-Stable Characteristics of Metamorphic Double δ-Doped Heterostructure Field-Effect Transistor;Japanese Journal of Applied Physics;2007-10-09
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