Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics-Reference-Cited by-同舟云学术

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Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Published:2008-07-07 Issue:1 Volume:93 Page:013303
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wöbkenberg Paul H.,Ball James,Kooistra Floris B.,Hummelen Jan C.,de Leeuw Dago M.,Bradley Donal D. C.,Anthopoulos Thomas D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2954015

Reference18 articles.

1. Large-scale complementary integrated circuits based on organic transistors

2. Characteristics of a sulfur-passivated InGaP∕InGaAs∕GaAs heterostructure field-effect transistor

3. Pentacene-based radio-frequency identification circuitry

4. Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics

5. Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

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