S‐passivated InP (100)‐(1×1) surface prepared by a wet chemical process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106890
Reference16 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Nearly ideal electronic properties of sulfide coated GaAs surfaces
3. Effects of passivating ionic films on the photoluminescence properties of GaAs
4. Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation
5. Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells
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