Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98304
Reference27 articles.
1. Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide
2. Electrical properties of the gallium arsenide–insulator interface
3. Perspectives on III–V compound MIS structures
4. GaAs metallization: Some problems and trends
5. Reduction of GaAs surface recombination velocity by chemical treatment
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