Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors-Reference-Cited by-同舟云学术

Efficient surface passivation using two-step ammonium sulfide based treatment for GaN/AlGaN heterojunction phototransistors

Published:2021-01-28 Issue:4 Volume:129 Page:045702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wen Quan¹,Tang Shaoji¹,Jiang Hao¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

Funder

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

National Key Research and Development Program of China

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0034922

Reference24 articles.

1. A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

2. Surface state and optical property of sulfur passivated InP

3. Surface recombination and sulfide passivation of GaN

4. Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment

5. Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution

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