AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System-Reference-Cited by-同舟云学术

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Published:2021-04-15 Issue:6 Volume:50 Page:3748-3753
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Lee Hsin-Ying,Chang Ting-Wei,Lee Ching-Ting^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-021-08879-8.pdf

Reference39 articles.

1. C.T. Lee, and H.Y. Juo, IEEE J. Electron Devices Soc. 6, 183 (2018).

2. S. Vodapally, C.G. Theodorou, Y. Bae, G. Ghibaudo, S. Cristoloveanu, K.S. Im, and J.H. Lee, IEEE Trans. Electron Devices 64, 3634 (2017).

3. R. Swain, K. Jena, and T.R. Lenka, Mater. Sci. Semicond. Process 53, 66 (2016).

4. R. Chu, Z. Chen, Y. Pei, S. Newman, S.P. DenBaars, and U.K. Mishra, IEEE Electron Device Lett. 30, 910 (2009).

5. L.H. Huang, S.H. Yeh, C.T. Lee, H. Tang, J. Bardwell, and J.B. Webb, IEEE Electron Device Lett. 29, 284 (2008).

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3. RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga₂O₃ as Dielectric Layer;2023 International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS);2023-03-06

4. Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors;Materials Today Physics;2023-02

5. Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics;Journal of Physics and Chemistry of Solids;2022-11

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