Improvements in the electrical properties of high-k HfO2 dielectric films on Si1−xGex substrates by postdeposition annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432291
Reference19 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
2. High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant
3. Proposal of Optical Floppy Disk Head and Preliminary Spacing Experiment between Lensless Head and Disk
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1. Issues in High-k Gate Dielectrics and its Stack Interfaces;High-k Gate Dielectrics for CMOS Technology;2012-08-23
2. Characterization of HfO[sub 2]∕Al[sub 2]O[sub 3] gate dielectric nanometer-stacks grown by atomic layer deposition on Ge substrates;AIP Conference Proceedings;2012
3. Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor;Chemistry of Materials;2011-03-14
4. Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy;Journal of Applied Physics;2011-01-15
5. Thermal Stability Improvement via Cyclic D[sub 2]O Radical Anneal Interposed in Atomic Layer Deposition Process;Journal of The Electrochemical Society;2011
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