Issues in High-k Gate Dielectrics and its Stack Interfaces
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Wiley-VCH Verlag GmbH & Co. KGaA
Reference141 articles.
1. High-κ gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001
2. High-K dielectrics for the gate stack;Locquet;J. Appl. Phys.,2006
3. Compatibility challenges for High-κ materials integration into CMOS technology;Guha;MRS Bull.,2002
4. High dielectric constant oxides;Robertson;Eur. Phys. J. Appl. Phys.,2004
5. High-? Gate Dielectrics
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