In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432293
Reference12 articles.
1. D. J. As, in Optoelectronic Properties of Semiconductors and Superlattices, edited by M. O. Manasreh (Taylor & Francis, New York, 2003), Vol. 19, Chap. 9, pp. 323–450, and references therein.
2. Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
3. Structure of GaN(0001): The laterally contracted Ga bilayer model
4. Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
5. Ga adsorption and desorption kinetics onM-plane GaN
Cited by 70 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process;Applied Surface Science;2024-04
2. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN;ACS Applied Materials & Interfaces;2023-08-02
3. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (b);2023-04-07
4. Impact of AlN buffer layers on MBE grown cubic GaN layers;Gallium Nitride Materials and Devices XVIII;2023-03-15
5. Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy;Journal of Crystal Growth;2023-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3