Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates-Reference-Cited by-同舟云学术

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

Published:2006-10 Issue: Volume:527-529 Page:1489-1492
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

As Donat J.¹,Potthast S.¹,Schörmann J.¹,Li S.F.¹,Lischka K.¹,Nagasawa Hiroyuki²,Abe Masayuki³

Affiliation:

1. University of Paderborn

2. Hoya Corporation

3. HOYA Advanced Semiconductor Technologies Co., Ltd.

Abstract

Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.527-529.1489.pdf

Reference11 articles.

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2. HOYA Advanced Semiconductor Technologies Co., Ltd., 1-17-16 Tanashioda, Sagamihara, Kanagawa 229-1125, Japan, Home page: URL: http: /www. hast. co. jp.

3. D.J. As, D. Schikora, and K. Lischka: phys. stat. sol. (c) 0 (2003), p.1607.

4. J. Schörmann, S. Potthast, M. Schnietz, S.F. Li, D.J. As, and K. Lischka: phys. stat. sol. (c) (2005), in Proc. of ICNS-6, Bremen (2005).

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