Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy-Reference-Cited by-同舟云学术

Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (1 0 0) β-Ga2O3 thin films using in-situ reflectance spectroscopy

Published:2023-02 Issue: Volume:603 Page:127003
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chou Ta-Shun,Bin Anooz Saud,Grüneberg Raimund,Tran Thuy Vi Thi,Rehm Jana,Galazka Zbigniew,Popp Andreas

Funder

Bundesministerium für Bildung und Forschung

European Regional Development Fund

European Commission

Leibniz ScienceCampus EEGA

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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5. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth;Kuramata;Jpn. J. Appl. Phys.,2016

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